Ceramics-Silikáty 53, (1) 5 - 8 (2009) |
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LOW-TEMPERATURE SINTERING AND MICROWAVE
DIELECTRIC PROPERTIES OF (Zn0.65Mg0.35)TiO₃-CaTiO₃
CERAMICS WITH H₃BO₃ ADDITION |
Yuan Ying, Zhang Shuren, Zhou Yiaohua,
Xiang Longcheng |
State key Laboratory of Electronic Thin Films and Integrated Devices,
University of Electronic Science and Technology of China,
Chengdu 610054, People’s Republic of China
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Keywords: ZnTiO₃, MgTiO₃, Low temperature sintering, Microwave ceramics |
Low-melting H₃BO₃, acting as sintering aid, was used to reduce the sintering temperature of 5 wt.% CaTiO₃-doped
(Zn0.65Mg0.35)TiO₃ ceramics. The sintering behaviors, microstructures and microwave dielectric properties with different
amounts of H₃BO₃ addition were investigated. The results showed that H₃BO₃ additive was very effective for lowering
the sintering temperature and improving the bulk density during sintering. This was due to the promotion of liquid-phase
sintering. In the case of 0.25 wt.% H₃BO₃ addition, fine-grained structure was observed, whereas abnormal grain growth
was occurred when 3 wt.% H₃BO₃ was doped. It was found that the addition of H₃BO₃ improved the dielectric constant (εr)
and quality factor (Q × f) .When 5 wt.% CaTiO₃ and 3 wt.% H₃BO₃ were added, the (Zn0.65Mg0.35)TiO₃ ceramics could be
sintered at 950~1000°C and showed excellent microwave dielectric properties: ε ≈ 20, Q × f > 48000 GHz (at 8 GHz) and
τf
≈ 5 ppm/°C. |
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