Ceramics-Silikáty 61, (3) 209 - 213 (2017) |
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MICROSTRUCTURE, PHASE EVOLUTION, AND MICROWAVE DIELECTRIC PROPERTIES OF Li₂O AND Ga₂O₃ DOPED ZINC ORTHOSILICATE
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Kim Shin 1, Yoon Sang-Ok 2, Kim Yun-Han 2 , Jeong Seong-Min 3, Park Hoon 4
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1 Hasla Co., Ltd, Gangneung 25452, Korea
2 Department of Materials Engineering, Graduate School, Gangneung-Wonju National University, Gangneung 25457, Korea
3 Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology(KICET), Jinju 52851, Korea
4 Department of Advanced Materials Engineering, Korea Polytechnic University, Siheung 15073, Korea
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Keywords: Zinc orthosilicate, Li₂O, Ga₂O₃, Liquid phase sintering, Dielectric constant, Quality factor
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Microstructure, phase evolution, and microwave dielectric properties of Li₂O and Ga₂O₃ doped zinc orthosilicate having the composition of Zn1.9Si1.05O₄, i.e. the Zn1.9-2xLixGaxSi1.05O₄ system where x=0.02∼0.10, were investigated. LiGaSiO4 and ZnGa₂O4 are observed as the secondary phase. The densification occurred by the liquid phase in the all specimens. The densification curves showed a sigmoidal shape. As the amount of Li₂O and Ga₂O₃ increased, the temperature indicating the maximum value of bulk density in each composition decreased from 1250°C to 1100°C. The value of dielectric constant against the sintering temperature showed a similar tendency as that of the bulk density. The presence of the liquid phase and the insufficient grain growth may cause the deterioration of the quality factor. The dielectric constant and the quality factor of the specimen of x=0.08 sintered at 1100°C were 6.28 and 27,097 GHz, respectively. |
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doi: 10.13168/cs.2017.0018
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