Ceramics-Silikáty 56 (2) 122-126 (2012)

Mn doping of GaN layers grown by MOVPE

P. Šimek, Z. Sofer, D. Sedmidubský, O. Jankovský, J. Hejtmánek, M. Maryško, M. Václavů, M. Mikulics

In this contribution we present a growth of Ga_1-xMn_xN layers by MOVPE. Mn doped GaN layers were grown with and without undoped GaN templates on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga_1-xMn_xN layers (MCp)₂Mn was used as a Mn – precursor. The flow of the Mn precursor was 0.2-3.2 μmol.min^-1. The deposition of Ga_1-xMn_xN layers was carried out under the pressure of 200 mbar, the temperature 1050 °C and the V/III ratio of 1360. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimally partially coalesced layer of pure GaN. The direct deposition of GaN:Mn layer on the low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. Another investigated parameter was the influence of nitrogen on the layer’s properties. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films.

Keywords: Metalorganic vapor phase epitaxy, Nitrides, Magnetic materials, Semiconducting III -V materials